Zenode.ai Logo
Beta
SIHP23N60E-GE3
Discrete Semiconductor Products

IRF614PBF

LTB

Deep-Dive with AI

Search across all available documentation for this part.

SIHP23N60E-GE3
Discrete Semiconductor Products

IRF614PBF

LTB

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIRF614PBF
Current - Continuous Drain (Id) @ 25°C2.7 A
Drain to Source Voltage (Vdss)250 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs8.2 nC
Input Capacitance (Ciss) (Max) @ Vds140 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)36 W
Rds On (Max) @ Id, Vgs2 Ohm
Supplier Device PackageTO-220AB
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1000$ 0.67

Description

General part information

IRF614 Series

N-Channel 250 V 2.7A (Tc) 36W (Tc) Through Hole TO-220AB

Documents

Technical documentation and resources