IRF614 Series

Catalog

MOSFET N-CH 250V 2.7A D2PAK

Part	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Mounting Type	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Gate Charge (Qg) (Max) @ Vgs
Vishay General Semiconductor - Diodes Division IRF614S	3.1 W 36 W	250 V	2 Ohm	TO-263 (D2PAK)	MOSFET (Metal Oxide)	4 V	140 pF	20 V	Surface Mount	N-Channel	-55 °C	150 °C	2.7 A	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	8.2 nC
Vishay General Semiconductor - Diodes Division IRF614STRR	3.1 W 36 W	250 V	2 Ohm	TO-263 (D2PAK)	MOSFET (Metal Oxide)	4 V	140 pF	20 V	Surface Mount	N-Channel	-55 °C	150 °C	2.7 A	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	8.2 nC
Vishay General Semiconductor - Diodes Division IRF614STRRPBF	3.1 W 36 W	250 V	2 Ohm	TO-263 (D2PAK)	MOSFET (Metal Oxide)	4 V	140 pF	20 V	Surface Mount	N-Channel	-55 °C	150 °C	2.7 A	10 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	8.2 nC
Vishay General Semiconductor - Diodes Division IRF614PBF	36 W	250 V	2 Ohm	TO-220AB	MOSFET (Metal Oxide)	4 V	140 pF	20 V	Through Hole	N-Channel	-55 °C	150 °C	2.7 A	10 V	TO-220-3	8.2 nC