FDA16N50-F109

Active

ON Semiconductor

POWER MOSFET, N-CHANNEL, UNIFETTM, 500 V, 16.5 A, 380 MΩ, TO-3P

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsPackage Drawing-340BZ-TO-3P-3LD / EIAJ SC-65, ISOLATED Datasheet

Discrete Semiconductor Products

FDA16N50-F109

Active

ON Semiconductor

POWER MOSFET, N-CHANNEL, UNIFETTM, 500 V, 16.5 A, 380 MΩ, TO-3P

Deep-Dive with AI

DocumentsPackage Drawing-340BZ-TO-3P-3LD / EIAJ SC-65, ISOLATED Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	FDA16N50-F109

Current - Continuous Drain (Id) @ 25°C	16.5 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Input Capacitance (Ciss) (Max) @ Vds	1945 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	205 W
Rds On (Max) @ Id, Vgs	380 mOhm
Supplier Device Package	TO-3PN
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

FDA16N50_F109 Series

Power MOSFET, N-Channel, UniFETTM, 500 V, 16.5 A, 380 mΩ, TO-3P

Part	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Mounting Type	Technology	Package / Case	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FDA16N50-F109	380 mOhm	10 V	TO-3PN	Through Hole	MOSFET (Metal Oxide)	SC-65-3 TO-3P-3	30 V	-55 °C	150 °C	1945 pF	16.5 A	205 W	5 V	500 V	N-Channel	45 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 4.15
		10	$ 2.73
		100	$ 1.92
		500	$ 1.58
		1000	$ 1.47
		2000	$ 1.41
Newark	Each	250	$ 1.55
		500	$ 1.51
ON Semiconductor	N/A	1	$ 1.30

Description

General part information

FDA16N50_F109 Series

UniFETTMMOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.