FDA16N50_F109 Series

Power MOSFET, N-Channel, UniFETTM, 500 V, 16.5 A, 380 mΩ, TO-3P

Catalog

Power MOSFET, N-Channel, UniFETTM, 500 V, 16.5 A, 380 mΩ, TO-3P

Part	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Mounting Type	Technology	Package / Case	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor FDA16N50-F109	380 mOhm	10 V	TO-3PN	Through Hole	MOSFET (Metal Oxide)	SC-65-3 TO-3P-3	30 V	-55 °C	150 °C	1945 pF	16.5 A	205 W	5 V	500 V	N-Channel	45 nC

Catalog

Power MOSFET, N-Channel, UniFETTM, 500 V, 16.5 A, 380 mΩ, TO-3P

Key Features

• RDS(on)= 380mΩ ( Max.)@ VGS= 10V, ID= 8.3A

• Low gate charge ( Typ. 32nC)

• Low Crss( Typ. 20pF)

• 100% avalanche tested

Description

UniFETTMMOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.