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RURG5060
Discrete Semiconductor Products

RURG5060

Obsolete
ON Semiconductor

DIODE GEN PURP 600V 50A TO247-2

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RURG5060
Discrete Semiconductor Products

RURG5060

Obsolete
ON Semiconductor

DIODE GEN PURP 600V 50A TO247-2

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationRURG5060
Current - Average Rectified (Io)50 A
Current - Reverse Leakage @ Vr250 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-65 C
Package / CaseTO-247-2
Reverse Recovery Time (trr)75 ns
Speed200 mA, 500 ns
Supplier Device PackageTO-247-2
TechnologyAvalanche
Voltage - DC Reverse (Vr) (Max) [Max]600 V
Voltage - Forward (Vf) (Max) @ If1.6 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

RURG5060_F085 Series

The RURG5060_F085 is an ultrafast diode with soft recovery characteristics (trr< 90ns). It has low forwardvoltage drop and is silicon nitride passivated ionimplanted epitaxial planar construction.This device is intended for use as a freewheeling/clamping diode and rectifier in a variety of switching powersupplies and other power switching applications. Its low stored charge and ultrafast recovery with soft recoverycharacteristic minimizes ringing and electrical noise in many power switching circuits, thus reducing power loss in the switching transistors.