Discrete Semiconductor Products

SIHFR220TRL-GE3

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MOSFET N-CH 200V 4.8A DPAK

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Discrete Semiconductor Products

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MOSFET N-CH 200V 4.8A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIHFR220TRL-GE3

Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Input Capacitance (Ciss) (Max) @ Vds	260 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	42 W, 2.5 W
Rds On (Max) @ Id, Vgs [Max]	800 mOhm
Supplier Device Package	TO-252AA
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	FET Type	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Technology	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Power Dissipation (Max)	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)
Vishay General Semiconductor - Diodes Division SIHFR220TRL-GE3	260 pF	4 V	-55 °C	150 °C	20 V	N-Channel	800 mOhm	200 V	MOSFET (Metal Oxide)	DPAK (2 Leads + Tab) SC-63 TO-252-3	14 nC	TO-252AA	2.5 W 42 W	Surface Mount	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 4.8A (Tc) 2.5W (Ta), 42W (Tc) Surface Mount TO-252AA

Technical documentation and resources