SIHFR220 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 200V 4.8A DPAK
| Part | Input Capacitance (Ciss) (Max) @ Vds | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Vgs (Max) | FET Type | Rds On (Max) @ Id, Vgs [Max] | Drain to Source Voltage (Vdss) | Technology | Package / Case | Gate Charge (Qg) (Max) @ Vgs | Supplier Device Package | Power Dissipation (Max) | Mounting Type | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 260 pF | 4 V | -55 °C | 150 °C | 20 V | N-Channel | 800 mOhm | 200 V | MOSFET (Metal Oxide) | DPAK (2 Leads + Tab) SC-63 TO-252-3 | 14 nC | TO-252AA | 2.5 W 42 W | Surface Mount | 10 V |