Specification	FDN5618P

Current - Continuous Drain (Id) @ 25°C	1.25 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	13.8 nC
Input Capacitance (Ciss) (Max) @ Vds	430 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	170 mOhm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

FDN5618P Series

60V P-Channel PowerTrench<sup>®</sup> MOSFET -1.25A, 170mΩ

Part	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs(th) (Max) @ Id	Vgs (Max)	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Technology	FET Type	Drain to Source Voltage (Vdss)	Supplier Device Package	Mounting Type
ON Semiconductor FDN5618P	170 mOhm	13.8 nC	-55 °C	150 °C	430 pF	SC-59 SOT-23-3 TO-236-3	3 V	20 V	500 mW	1.25 A	4.5 V 10 V	MOSFET (Metal Oxide)	P-Channel	60 V	SOT-23-3	Surface Mount

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

This 60V P-Channel MOSFET uses a high voltage PowerTrench process. It has been optimized for power management applications.

Technical documentation and resources