Discrete Semiconductor Products
STS10N3LH5
NRNDSTMicroelectronics
N-CHANNEL 30 V, 0.019 OHM;, 10 A, SO-8 STRIPFET(TM); V POWER MOSFET
Discrete Semiconductor Products
STS10N3LH5
NRNDSTMicroelectronics
N-CHANNEL 30 V, 0.019 OHM;, 10 A, SO-8 STRIPFET(TM); V POWER MOSFET
Technical Specifications
Parameters and characteristics for this part
| Specification | STS10N3LH5 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 10 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 4.6 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 475 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 0.154 in |
| Package / Case | 8-SOIC |
| Package / Case | 3.9 mm |
| Power Dissipation (Max) | 2.5 W |
| Rds On (Max) @ Id, Vgs | 21 mOhm |
| Supplier Device Package | 8-SOIC |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 22 V |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 3741 | $ 1.53 | |
Description
General part information
STS10N3LH5 Series
This STripFETV Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM.
Documents
Technical documentation and resources