UFR3015PF

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DIODE GEN PURP 150V 30A DO21

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Discrete Semiconductor Products

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DIODE GEN PURP 150V 30A DO21

Technical Specifications

Parameters and characteristics for this part

Specification	UFR3015PF

Capacitance @ Vr, F	140 pF
Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	15 µA
Mounting Type	Press Fit
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	DO-208AA
Reverse Recovery Time (trr)	35 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-21
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	975 mV

Part	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Technology	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Supplier Device Package	Package / Case	Mounting Type	Reverse Recovery Time (trr)
Microchip Technology UFR3015PF	15 µA	140 pF	Standard	175 ░C	-55 C	30 A	975 mV	200 mA 500 ns	DO-21	DO-208AA	Press Fit	35 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 54.32

General part information

Diode 150 V 30A Press Fit DO-21

Technical documentation and resources

No documents available