APTMC170AM60CT1AG

Obsolete

SIC 2N-CH 1700V 50A SP1

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Discrete Semiconductor Products

Obsolete

SIC 2N-CH 1700V 50A SP1

Technical Specifications

Parameters and characteristics for this part

Specification	APTMC170AM60CT1AG

Configuration	2 N Channel
Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	1.7 kV
Drain to Source Voltage (Vdss)	1700 V
Gate Charge (Qg) (Max) @ Vgs	190 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3080 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	SP1
Power - Max [Max]	350 W
Rds On (Max) @ Id, Vgs [Max]	60 mOhm
Supplier Device Package	SP1
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	2.3 V

Part	Power - Max [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Technology	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Mounting Type	Configuration	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)
Microchip Technology APTMC170AM60CT1AG	350 W	3080 pF	50 A	2.3 V	Silicon Carbide (SiC)	SP1	60 mOhm	Chassis Mount	2 N Channel	SP1	190 nC	150 °C	-40 °C	1.7 kV	1700 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 1700V (1.7kV) 50A (Tc) 350W Chassis Mount SP1

Technical documentation and resources

No documents available