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Discrete Semiconductor Products

2N3737UB

Active
Microchip Technology

SMALL-SIGNAL BJT UB ROHS COMPLIANT: YES

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Search across all available documentation for this part.

UB
Discrete Semiconductor Products

2N3737UB

Active
Microchip Technology

SMALL-SIGNAL BJT UB ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2N3737UB
Current - Collector (Ic) (Max) [Max]1.5 A
Current - Collector Cutoff (Max) [Max]10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]20
Mounting TypeSurface Mount
Package / Case3-SMD, No Lead
Power - Max [Max]500 mW
Supplier Device PackageUB
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic900 mV
Voltage - Collector Emitter Breakdown (Max) [Max]40 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 16.95
Microchip DirectN/A 1$ 18.26
NewarkEach 100$ 16.95
500$ 16.30

Description

General part information

2N3737UB-Transistor Series

This specification covers the performance requirements for NPN, silicon, switching 2N3735 and 2N3737 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/395. Two levels of product assurance are provided for each unencapsulated device type (JANHC and JANKC). RHA level designators "M", "D", "P", "L", "R", "F", "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

Documents

Technical documentation and resources