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Discrete Semiconductor Products

CSD13201W10

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Texas Instruments

12-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE WLP 1 MM X 1 MM, 34 MOHM

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DSBGA (YZB)
Discrete Semiconductor Products

CSD13201W10

Active
Texas Instruments

12-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE WLP 1 MM X 1 MM, 34 MOHM

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD13201W10
Current - Continuous Drain (Id) @ 25°C1.6 A
Drain to Source Voltage (Vdss)12 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 1.8 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]2.9 nC
Input Capacitance (Ciss) (Max) @ Vds462 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case4-UFBGA, DSBGA
Power Dissipation (Max)1.2 W
Rds On (Max) @ Id, Vgs [Max]34 mOhm
Supplier Device Package4-DSBGA (1x1)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max) @ Id1.1 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.48
10$ 0.37
100$ 0.22
500$ 0.21
1000$ 0.14
Digi-Reel® 1$ 0.48
10$ 0.37
100$ 0.22
500$ 0.21
1000$ 0.14
Tape & Reel (TR) 3000$ 0.13
6000$ 0.12
9000$ 0.11
30000$ 0.11
75000$ 0.10
Texas InstrumentsLARGE T&R 1$ 0.20
100$ 0.14
250$ 0.11
1000$ 0.07

Description

General part information

CSD13201W10 Series

This 12-V, 26-mΩ, N-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.

This 12-V, 26-mΩ, N-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.