CSD13201W10 Series

12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 34 mOhm

Catalog

12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 34 mOhm

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Vgs(th) (Max) @ Id	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max)	Technology	Drain to Source Voltage (Vdss)	Supplier Device Package
Texas Instruments CSD13201W10	N-Channel	1.6 A	-55 °C	150 °C	Surface Mount	1.1 V	4-UFBGA DSBGA	1.8 V 4.5 V	462 pF	8 V	34 mOhm	2.9 nC	1.2 W	MOSFET (Metal Oxide)	12 V	4-DSBGA (1x1)

Catalog

12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 34 mOhm

Key Features

• Ultra-Low Qgand QgdSmall Footprint (1 mm × 1 mm)Low Profile 0.62-mm HeightPb-FreeRoHS CompliantHalogen-FreeGate-Source Voltage ClampUltra-Low Qgand QgdSmall Footprint (1 mm × 1 mm)Low Profile 0.62-mm HeightPb-FreeRoHS CompliantHalogen-FreeGate-Source Voltage Clamp

Description

This 12-V, 26-mΩ, N-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. This 12-V, 26-mΩ, N-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile.