Discrete Semiconductor Products

STGY80H65DFB

Obsolete

IGBT 650V 120A 469W MAX247

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Discrete Semiconductor Products

Obsolete

IGBT 650V 120A 469W MAX247

Technical Specifications

Parameters and characteristics for this part

Specification	STGY80H65DFB

Current - Collector (Ic) (Max) [Max]	120 A
Current - Collector Pulsed (Icm)	240 A
Gate Charge	414 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power - Max [Max]	469 W
Reverse Recovery Time (trr)	85 ns
Supplier Device Package	MAX247™
Switching Energy	1.5 mJ, 2.1 mJ
Td (on/off) @ 25°C [Max]	280 ns
Td (on/off) @ 25°C [Min]	84 ns
Test Condition	400 V, 80 A, 15 V, 10 Ohm
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	650 V

Part	IGBT Type	Current - Collector Pulsed (Icm)	Power - Max [Max]	Gate Charge	Voltage - Collector Emitter Breakdown (Max) [Max]	Current - Collector (Ic) (Max) [Max]	Reverse Recovery Time (trr)	Mounting Type	Test Condition	Vce(on) (Max) @ Vge, Ic	Td (on/off) @ 25°C [Max]	Td (on/off) @ 25°C [Min]	Switching Energy	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package
STMicroelectronics STGY80H65DFB	Trench Field Stop	240 A	469 W	414 nC	650 V	120 A	85 ns	Through Hole	10 Ohm 15 V 80 A 400 V	2 V	280 ns	84 ns	1.5 mJ 2.1 mJ	TO-247-3	175 °C	-55 °C	MAX247™

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT Trench Field Stop 650 V 120 A 469 W Through Hole MAX247™

Technical documentation and resources