STE70NM60
ActiveN-CHANNEL 600V - 0.05 OHM - 70A - ISOTOP ZENER-PROTECTED MDMESH(TM) POWER MOSFET
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STE70NM60
ActiveN-CHANNEL 600V - 0.05 OHM - 70A - ISOTOP ZENER-PROTECTED MDMESH(TM) POWER MOSFET
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STE70NM60 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 70 A |
| Drain to Source Voltage (Vdss) | 600 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 266 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 7300 pF |
| Mounting Type | Chassis Mount |
| Operating Temperature | 150 °C |
| Package / Case | ISOTOP |
| Power Dissipation (Max) | 600 W |
| Rds On (Max) @ Id, Vgs | 55 mOhm |
| Supplier Device Package | ISOTOP® |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 30 V |
| Vgs(th) (Max) @ Id | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 38.13 | |
Description
General part information
STE70NM60 Series
The MDmesh™is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
Documents
Technical documentation and resources