Specification	STD4N80K5

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	10.5 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	175 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-252-3, SC-63, DPAK (2 Leads + Tab)
Power Dissipation (Max)	60 W
Rds On (Max) @ Id, Vgs	2.5 Ohm
Supplier Device Package	DPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

STD4N80K5 Series

N-channel 800 V, 2.1 Ohm typ., 3 A MDmesh K5 Power MOSFET in DPAK package

Part	Mounting Type	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Operating Temperature [Max]	Operating Temperature [Min]	FET Type	Technology	Vgs (Max)	Supplier Device Package
STMicroelectronics STD4N80K5	Surface Mount	800 V	10.5 nC	60 W	3 A	DPAK (2 Leads + Tab) SC-63 TO-252-3	5 V	10 V	175 pF	2.5 Ohm	150 °C	-55 °C	N-Channel	MOSFET (Metal Oxide)	30 V	DPAK

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	2651	$ 2.09
Mouser	N/A	1	$ 1.82
		10	$ 1.27
		100	$ 0.91
		500	$ 0.72
		1000	$ 0.65
		2500	$ 0.59
		5000	$ 0.56
Newark	Each (Supplied on Cut Tape)	1	$ 2.40
		10	$ 1.66
		25	$ 1.51
		50	$ 1.36
		100	$ 1.20
		250	$ 1.12
		500	$ 1.03
		1000	$ 0.97

Description

General part information

STD4N80K5 Series

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.