
FDMA6023PZT
ObsoleteDUAL P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET -20V, -3.6A, 60MΩ
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FDMA6023PZT
ObsoleteDUAL P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET -20V, -3.6A, 60MΩ
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Technical Specifications
Parameters and characteristics for this part
| Specification | FDMA6023PZT |
|---|---|
| Configuration | 2 P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6 A |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 17 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 885 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-UDFN Exposed Pad |
| Power - Max [Max] | 700 mW |
| Rds On (Max) @ Id, Vgs | 60 mOhm |
| Supplier Device Package | 6-MicroFET (2x2) |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Bulk | 792 | $ 0.38 | |
| 792 | $ 0.38 | |||
Description
General part information
FDMA6023PZT Series
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2X2 Thin package offers exceptional thermal performance for it’s physical size and is well suited to linear mode applications.
Documents
Technical documentation and resources