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Discrete Semiconductor Products

FDMA6023PZT

Obsolete
ON Semiconductor

DUAL P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET -20V, -3.6A, 60MΩ

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6-UMLP
Discrete Semiconductor Products

FDMA6023PZT

Obsolete
ON Semiconductor

DUAL P-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET -20V, -3.6A, 60MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMA6023PZT
Configuration2 P-Channel
Current - Continuous Drain (Id) @ 25°C3.6 A
Drain to Source Voltage (Vdss)20 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]17 nC
Input Capacitance (Ciss) (Max) @ Vds885 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-UDFN Exposed Pad
Power - Max [Max]700 mW
Rds On (Max) @ Id, Vgs60 mOhm
Supplier Device Package6-MicroFET (2x2)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 792$ 0.38
792$ 0.38

Description

General part information

FDMA6023PZT Series

This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2X2 Thin package offers exceptional thermal performance for it’s physical size and is well suited to linear mode applications.