Specification	PSMN1R2-30YLC,115

Current - Continuous Drain (Id) @ 25°C	100 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	78 nC
Input Capacitance (Ciss) (Max) @ Vds	5093 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-669, SC-100
Power Dissipation (Max)	215 W
Rds On (Max) @ Id, Vgs	1.25 mOhm
Supplier Device Package	Power-SO8, LFPAK56
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

PSMN1R2 Series

Part	FET Type	Drain to Source Voltage (Vdss)	Technology	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Package / Case	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	FET Feature	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]
Freescale Semiconductor - NXP PSMN1R2-30YLC,115	N-Channel	30 V	MOSFET (Metal Oxide)	1.25 mOhm	215 W	SC-100 SOT-669	LFPAK56 Power-SO8	4.5 V 10 V	5093 pF	20 V	100 A	78 nC	Surface Mount	-55 °C	175 ░C
Freescale Semiconductor - NXP PSMN1R2-25YLDX	N-Channel	25 V	MOSFET (Metal Oxide)	1.2 mOhm	172 W	SC-100 SOT-669	LFPAK56 Power-SO8	4.5 V 10 V	4327 pF	20 V	100 A		Surface Mount	-55 °C	175 ░C	Schottky Diode (Body)	60.3 nC	2.2 V
Freescale Semiconductor - NXP PSMN1R2-25YLC,115	N-Channel	25 V	MOSFET (Metal Oxide)	1.3 mOhm		SC-100 SOT-669	LFPAK56 Power-SO8	4.5 V 10 V	4173 pF	20 V	100 A		Surface Mount	-55 °C	175 ░C		66 nC		179 W
Freescale Semiconductor - NXP PSMN1R2-30YLDX	N-Channel	30 V	MOSFET (Metal Oxide)	1.24 mOhm		SC-100 SOT-669	LFPAK56 Power-SO8	4.5 V 10 V	4616 pF	20 V	100 A	68 nC	Surface Mount	-55 °C	175 ░C			2.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 1.46
		10	$ 1.19
		100	$ 0.93
		500	$ 0.79
	Digi-Reel®	1	$ 1.46
		10	$ 1.19
		100	$ 0.93
		500	$ 0.79
	Tape & Reel (TR)	1500	$ 0.64
		3000	$ 0.60
		7500	$ 0.57
		10500	$ 0.56
LCSC	Piece	1	$ 1.25
		10	$ 1.05
		30	$ 0.94
		100	$ 0.82
		500	$ 0.76
		1500	$ 0.74

Description

General part information

PSMN1R2 Series

Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment.

Documents

Technical documentation and resources

Datasheet

Questions about package outline drawings

Application note

Using Power MOSFET Zth Curves

Application note

plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body

Marcom graphics

PSMN1R2-30YLC,115

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PSMN1R2-30YLC,115

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Technical Specifications

PSMN1R2 Series

Pricing

Description

PSMN1R2 Series

Documents

Datasheet

Questions about package outline drawings

Using Power MOSFET Zth Curves

plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body

Understanding power MOSFET data sheet parameters

Power MOSFET frequently asked questions and answers

LFPAK MOSFET thermal design guide - Part 2

Failure signature of Electrical Overstress on Power MOSFETs

LFPAK56; Reel pack for SMD, 7"; Q1/T1 product orientation

Designing RC Snubbers

Using power MOSFETs in parallel

Wave soldering profile

Nexperia package poster

RC Thermal Models

Power MOSFET single-shot and repetitive avalanche ruggedness rating

LFPAK MOSFET thermal design guide, Chinese version

PSMN1R2 Series