Integrated Circuits (ICs)

AT28LV010-20TI

Obsolete

Microchip Technology

IC EEPROM 1MBIT PARALLEL 32TSOP

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Integrated Circuits (ICs)

AT28LV010-20TI

Obsolete

Microchip Technology

IC EEPROM 1MBIT PARALLEL 32TSOP

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DocumentsDatasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	AT28LV010-20TI

Access Time	200 ns
Memory Format	EEPROM
Memory Interface	Parallel
Memory Organization	128K x 8
Memory Size	1 Mbit
Memory Type	Non-Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	0.724 in
Package / Case	18.4 mm
Package / Case	32-TFSOP
Supplier Device Package	32-TSOP
Technology	EEPROM
Voltage - Supply [Max]	3.6 V
Voltage - Supply [Min]	3 V
Write Cycle Time - Word, Page	10 ms

AT28LV010 Series

Low-Voltage 1Mbit (128Kbit x 8) Parallel EEPROM

Part	Memory Organization	Voltage - Supply [Max]	Voltage - Supply [Min]	Memory Size	Supplier Device Package	Supplier Device Package [y]	Supplier Device Package [x]	Write Cycle Time - Word, Page	Memory Format	Access Time	Technology	Mounting Type	Package / Case	Memory Interface	Memory Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Package / Case	Package / Case
Microchip Technology AT28LV010-20JU	128K x 8	3.6 V	3 V	1 Mbit	32-PLCC	11.43	13.97	10 ms	EEPROM	200 ns	EEPROM	Surface Mount	32-LCC (J-Lead)	Parallel	Non-Volatile	-40 °C	85 °C
Microchip Technology AT28LV010-20PI	128K x 8	3.6 V	3 V	1 Mbit	32-PDIP			10 ms	EEPROM	200 ns	EEPROM	Through Hole	32-DIP	Parallel	Non-Volatile	-40 °C	85 °C	15.24 mm	0.6 in
Microchip Technology AT28LV010-20TU-235	128K x 8	3.6 V	3 V	1 Mbit	32-TSOP			10 ms	EEPROM	200 ns	EEPROM	Surface Mount	32-TFSOP	Parallel	Non-Volatile	-40 °C	85 °C	18.4 mm	0.724 in
Microchip Technology AT28LV010-25SC	128K x 8	3.6 V	3 V	1 Mbit	32-SOP			10 ms	EEPROM	250 ns	EEPROM	Surface Mount	32-SOIC	Parallel	Non-Volatile			0.295 in		7.5 mm
Microchip Technology AT28LV010-20TA	128K x 8	3.6 V	3 V	1 Mbit	32-TSOP			10 ms	EEPROM	200 ns	EEPROM	Surface Mount	32-TFSOP	Parallel	Non-Volatile	-40 °C	125 °C	18.4 mm	0.724 in
Microchip Technology AT28LV010-20JA	128K x 8	3.6 V	3 V	1 Mbit	32-PLCC	11.43	13.97	10 ms	EEPROM	200 ns	EEPROM	Surface Mount	32-LCC (J-Lead)	Parallel	Non-Volatile	-40 °C	125 °C
Microchip Technology AT28LV010-20TI	128K x 8	3.6 V	3 V	1 Mbit	32-TSOP			10 ms	EEPROM	200 ns	EEPROM	Surface Mount	32-TFSOP	Parallel	Non-Volatile	-40 °C	85 °C	18.4 mm	0.724 in
Microchip Technology AT28LV010-20JU-T	128K x 8	3.6 V	3 V	1 Mbit	32-PLCC	13.97	11.43	10 ms	EEPROM	200 ns	EEPROM	Surface Mount	32-LCC (J-Lead)	Parallel	Non-Volatile	-40 °C	85 °C
Microchip Technology AT28LV010-20JU-319	128K x 8	3.6 V	3 V	1 Mbit	32-PLCC	11.43	13.97	10 ms	EEPROM	200 ns	EEPROM	Surface Mount	32-LCC (J-Lead)	Parallel	Non-Volatile	-40 °C	85 °C
Microchip Technology AT28LV010-20TU	128K x 8	3.6 V	3 V	1 Mbit	32-TSOP			10 ms	EEPROM	200 ns	EEPROM	Surface Mount	32-TFSOP	Parallel	Non-Volatile	-40 °C	85 °C	18.4 mm	0.724 in

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

AT28LV010 Series

High-performance 1M EEPROM offers access times to 200ns with 54mW power dissipation and 3.0V supply voltage. Deselected, CMOS standby current is less than 20µA . It is accessed like static RAM for the read or write cycle without external components, it contains a 128-byte page register to allow writing of up to 128 bytes simultaneously. The EEPROM features Internal error correction for extended endurance and improved data retention. Optional software data protection mechanism guards against inadvertent writes, and an extra 128 bytes of EEPROM enables device identification or tracking.

Documents

Technical documentation and resources