Zenode.ai Logo
Beta
NGB8207ABNT4G
Discrete Semiconductor Products

NGB15N41ACLT4G

Obsolete

Deep-Dive with AI

Search across all available documentation for this part.

NGB8207ABNT4G
Discrete Semiconductor Products

NGB15N41ACLT4G

Obsolete

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationNGB15N41ACLT4G
Current - Collector (Ic) (Max) [Max]15 A
Current - Collector Pulsed (Icm)50 A
Input TypeLogic
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / CaseD2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power - Max [Max]107 W
Supplier Device PackageD2PAK
Td (on/off) @ 25°C [custom]-
Td (on/off) @ 25°C [custom]4 µs
Test Condition1000 Ohm, 300 V, 6.5 A
Vce(on) (Max) @ Vge, Ic2.2 V
Voltage - Collector Emitter Breakdown (Max)440 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

NGB15N41ACLT4G Series

This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive

Documents

Technical documentation and resources

No documents available