Catalog
15 AMP, 410V CLAMP
Key Features
• DPAK Package Offers Smaller Footprint and Increased Board Space
• Gate-Emitter ESD Protection
• Temperature Compensated Gate-Collector Voltage Clamp Limits Stress Applied to Load
• Integrated ESD Diode Protection
• New Cell Design Increases Unclamped Inductive Switching (UIS) Energy Per Area
• Short-Circuit Withstand Capability
• Low Threshold Voltage to Interface Power Loads to Logic or Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• Optional Gate Resistor (RG) and Gate-Emitter Resistor (RGE)
Description
AI
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over-Voltage clamped protection for use in inductive coil drivers applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. End Products: Automotive
