Discrete Semiconductor Products

STH272N6F7-6AG

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MOSFET N-CH 60V 180A H2PAK-6

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Discrete Semiconductor Products

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MOSFET N-CH 60V 180A H2PAK-6

Technical Specifications

Parameters and characteristics for this part

Specification	STH272N6F7-6AG

Current - Continuous Drain (Id) @ 25°C	180 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	170 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	11000 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-7, D2PAK (6 Leads + Tab)
Power Dissipation (Max)	333 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	1.5 mOhm
Supplier Device Package	H2PAK-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Package / Case	Supplier Device Package	Grade	Vgs (Max)	Mounting Type	Technology	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Max]	Operating Temperature [Min]	Qualification	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id
STMicroelectronics STH272N6F7-6AG	180 A	N-Channel	60 V	D2PAK (6 Leads + Tab) TO-263-7	H2PAK-6	Automotive	20 V	Surface Mount	MOSFET (Metal Oxide)	333 W	170 nC	10 V	175 °C	-55 °C	AEC-Q101	11000 pF	1.5 mOhm	4 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 60 V 180A (Tc) 333W (Tc) Surface Mount H2PAK-6

Technical documentation and resources