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ROHM RBR10NS40AFHTL

Discrete Semiconductor Products

R6011KNJTL

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Rohm Semiconductor

600V 11A TO-263, HIGH-SPEED SWITCHING POWER MOSFET

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Search across all available documentation for this part.

DocumentsImportance of Probe Calibration When Measuring Power: Deskew Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)+42

ROHM RBR10NS40AFHTL

Discrete Semiconductor Products

R6011KNJTL

Active

Rohm Semiconductor

600V 11A TO-263, HIGH-SPEED SWITCHING POWER MOSFET

Deep-Dive with AI

DocumentsImportance of Probe Calibration When Measuring Power: Deskew Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)+42

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	R6011KNJTL

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	22 nC
Input Capacitance (Ciss) (Max) @ Vds	740 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	124 W
Supplier Device Package	LPTS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 3.08
Mouser	N/A	1	$ 2.41
		10	$ 1.50
		100	$ 1.35
		250	$ 1.25
		500	$ 1.13
		1000	$ 1.06
		2000	$ 0.95
Newark	Each (Supplied on Cut Tape)	1	$ 2.36
		10	$ 1.61
		25	$ 1.51
		50	$ 1.41
		100	$ 1.32
		300	$ 1.29
		500	$ 1.16
		1000	$ 1.11

Description

General part information

Super Junction-MOS KN Series

R6011KNJ is Low on-resistance and ultra fast switching speed Power MOSFET.

Documents

Technical documentation and resources

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Explanation for Marking

Package Information

Notes for Temperature Measurement Using Thermocouples

Package Dimensions

Package Information

Condition of Soldering / Land Pattern Reference

Package Information

Judgment Criteria of Thermal Evaluation

PCB Layout Thermal Design Guide

What Is Thermal Design

Method for Monitoring Switching Waveform

Schematic Design & Verification

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

Precautions When Measuring the Rear of the Package with a Thermocouple

Basics of Thermal Resistance and Heat Dissipation

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Moisture Sensitivity Level - Transistors

Package Information

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

How to Use the Thermal Resistance and Thermal Characteristics Parameters

θ<sub>JA</sub> and Ψ<sub>JT</sub>

How to Create Symbols for PSpice Models

What is a Thermal Model? (Transistor)

θ<sub>JC</sub> and Ψ<sub>JT</sub>

R6011KNJ Data Sheet

About Flammability of Materials

Environmental Data

Inner Structure

Package Information

How to Use LTspice® Models

Schematic Design & Verification

Report of SVHC under REACH Regulation

Environmental Data

Taping Information

Package Information

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

Two-Resistor Model for Thermal Simulation

Part Explanation

Application Note

Compliance of the RoHS directive

Environmental Data

List of Transistor Package Thermal Resistance

Measurement Method and Usage of Thermal Resistance RthJC

Anti-Whisker formation - Transistors

Package Information

ESD Data

Characteristics Data

Types and Features of Transistors

Application Note

Notes for Calculating Power Consumption:Static Operation

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

About Export Regulations

Export Information

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Reliability Test Result

Manufacturing Data

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

MOSFET Gate Resistor Setting for Motor Driving

Technical Article

Super Junction-MOS KN Series

600V 11A TO-263, High-speed switching Power MOSFET

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Mounting Type	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Package / Case
Rohm Semiconductor R6011KNJTL	11 A	10 V	20 V	150 °C	-55 °C	22 nC	5 V	Surface Mount	600 V	124 W	MOSFET (Metal Oxide)	LPTS	740 pF	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB