600V 11A TO-263, High-speed switching Power MOSFET
600V 11A TO-263, High-speed switching Power MOSFET
600V 11A TO-263, High-speed switching Power MOSFET
| Part | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Operating Temperature [Max] | Operating Temperature [Min] | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Mounting Type | Drain to Source Voltage (Vdss) | Power Dissipation (Max) | Technology | Supplier Device Package | Input Capacitance (Ciss) (Max) @ Vds | FET Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 11 A | 10 V | 20 V | 150 °C | -55 °C | 22 nC | 5 V | Surface Mount | 600 V | 124 W | MOSFET (Metal Oxide) | LPTS | 740 pF | N-Channel | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB |