Discrete Semiconductor Products

G33N03D3

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MOSFET 2N-CH 30V 30A 8DFN

Discrete Semiconductor Products

Active

MOSFET 2N-CH 30V 30A 8DFN

Technical Specifications

Parameters and characteristics for this part

Specification	G33N03D3

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Tc)	28 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Max)	15 nC, 16 nC
Input Capacitance (Ciss) (Max)	837 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	8-PowerVDFN
Package Length	3 mm
Package Name	8-DFN
Package Width	3 mm
Power - Max (Tc)	13 W
Rds On (Max)	11 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.5 V

Part	Package Width	Package Name	Package Length	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) (Tc)	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Channel Count	Configuration	Configuration - Features	Rds On (Max)	Mounting Type	Power - Max (Tc)	Technology	Input Capacitance (Ciss) (Max)	Package / Case
Goford Semiconductor G33N03D3	3 mm	8-DFN	3 mm	15 nC 16 nC	30 V	28 A	2.5 V	-55 °C	150 °C	2	N-Channel	Dual	11 mOhm	Surface Mount	13 W	MOSFET (Metal Oxide)	837 pF	8-PowerVDFN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

3D models and CAD resources for this part

General part information

Mosfet Array 30V 28A (Tc) 13W (Tc) Surface Mount 8-DFN (3x3)

Technical documentation and resources