Discrete Semiconductor Products
STGD6NC60HDT4
ActiveSTMicroelectronics
TRANS IGBT CHIP N-CH 600V 15A 3-PIN(2+TAB) DPAK T/R
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Discrete Semiconductor Products
STGD6NC60HDT4
ActiveSTMicroelectronics
TRANS IGBT CHIP N-CH 600V 15A 3-PIN(2+TAB) DPAK T/R
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STGD6NC60HDT4 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 15 A |
| Current - Collector Pulsed (Icm) | 21 A |
| Gate Charge | 13.6 nC |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power - Max [Max] | 56 W |
| Reverse Recovery Time (trr) | 21 ns |
| Supplier Device Package | DPAK |
| Switching Energy | 68 µJ, 20 µJ |
| Td (on/off) @ 25°C [custom] | 12 ns |
| Td (on/off) @ 25°C [custom] | 76 ns |
| Test Condition | 15 V, 390 V, 3 A, 10 Ohm |
| Vce(on) (Max) @ Vge, Ic [Max] | 2.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 600 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 1785 | $ 1.62 | |
Description
General part information
STGD6NC60HDT4 Series
This device is a very fast IGBT developed using advanced PowerMESH™ technology. This process guarantees an excellent trade-off between switching performance and low on-state behavior. This device is well-suited for resonant or soft-switching applications.
Documents
Technical documentation and resources