Discrete Semiconductor Products
2STR2230
ActiveSTMicroelectronics
TRANS GP BJT PNP 30V 1.5A 500MW 3-PIN SOT-23 T/R
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Discrete Semiconductor Products
2STR2230
ActiveSTMicroelectronics
TRANS GP BJT PNP 30V 1.5A 500MW 3-PIN SOT-23 T/R
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 2STR2230 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1.5 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 170 |
| Frequency - Transition | 100 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -65 °C |
| Package / Case | SOT-23-3, TO-236-3, SC-59 |
| Power - Max [Max] | 500 mW |
| Supplier Device Package | SOT-23-3 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 800 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 30 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
2STR2230 Series
The device in a PNP transistor manufactured using new "PB-HCD" (power bipolar high current density) technology. The resulting transistor shows exceptional high gain performances coupled with very low saturation voltage.
Documents
Technical documentation and resources