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D2PAK

Discrete Semiconductor Products

NTB6410ANG

Obsolete

ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 100V, 76A, 13 MΩ

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DocumentsDatasheet Package Drawing-418B-04-D2PAK 3 +1

D2PAK

Discrete Semiconductor Products

NTB6410ANG

Obsolete

ON Semiconductor

SINGLE N-CHANNEL POWER MOSFET 100V, 76A, 13 MΩ

Deep-Dive with AI

DocumentsDatasheet Package Drawing-418B-04-D2PAK 3 +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NTB6410ANG

Current - Continuous Drain (Id) @ 25°C	76 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	120 nC
Input Capacitance (Ciss) (Max) @ Vds	4500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	188 W
Rds On (Max) @ Id, Vgs	13 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NTB6411AN Series

Power MOSFET 100V 58A 18.2 mohm Single N-Channel D2PAK

Documents

Technical documentation and resources

Datasheet

Package Drawing-418B-04-D2PAK 3

Package Drawing

Datasheet

NTB6411AN Series

Power MOSFET 100V 58A 18.2 mohm Single N-Channel D2PAK

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor NTB6411ANG	100 V	4 V	Surface Mount	D2PAK	14 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	100 nC	N-Channel	217 W	MOSFET (Metal Oxide)	77 A	-55 °C	175 ░C	3700 pF	10 V
ON Semiconductor NTB6410ANG	100 V	4 V	Surface Mount	D2PAK	13 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	120 nC	N-Channel	188 W	MOSFET (Metal Oxide)	76 A	-55 °C	175 ░C		10 V	4500 pF
ON Semiconductor NTB6412ANG	100 V	4 V	Surface Mount	D2PAK	18.2 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	100 nC	N-Channel	167 W	MOSFET (Metal Oxide)	58 A	-55 °C	175 ░C		10 V	3500 pF
ON Semiconductor NTB6448ANT4G	100 V	4 V	Surface Mount	D2PAK	13 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	120 nC	N-Channel		MOSFET (Metal Oxide)					10 V	4500 pF