NTB6411AN Series

Power MOSFET 100V 58A 18.2 mohm Single N-Channel D2PAK

Catalog

Power MOSFET 100V 58A 18.2 mohm Single N-Channel D2PAK

Part	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Mounting Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Package / Case	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Power Dissipation (Max)	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor NTB6411ANG	100 V	4 V	Surface Mount	D2PAK	14 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	100 nC	N-Channel	217 W	MOSFET (Metal Oxide)	77 A	-55 °C	175 ░C	3700 pF	10 V
ON Semiconductor NTB6410ANG	100 V	4 V	Surface Mount	D2PAK	13 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	120 nC	N-Channel	188 W	MOSFET (Metal Oxide)	76 A	-55 °C	175 ░C		10 V	4500 pF
ON Semiconductor NTB6412ANG	100 V	4 V	Surface Mount	D2PAK	18.2 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	100 nC	N-Channel	167 W	MOSFET (Metal Oxide)	58 A	-55 °C	175 ░C		10 V	3500 pF
ON Semiconductor NTB6448ANT4G	100 V	4 V	Surface Mount	D2PAK	13 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	20 V	120 nC	N-Channel		MOSFET (Metal Oxide)					10 V	4500 pF

Power MOSFET 100V 58A 18.2 mohm Single N-Channel D2PAK

• Low RDS(on)

• High Current Capability

• 100% Avalanche Tested

• RoHS Compliant

Power MOSFET 100V 58A 18.2 mohm Single N-Channel D2PAK