Discrete Semiconductor Products

SCT016H120G3AG

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STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 1200 V, 16 MOHM TYP., 112 A IN AN H2PAK-7 PACKAGE

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Discrete Semiconductor Products

SCT016H120G3AG

Active

STMicroelectronics

AUTOMOTIVE-GRADE SILICON CARBIDE POWER MOSFET 1200 V, 16 MOHM TYP., 112 A IN AN H2PAK-7 PACKAGE

Deep-Dive with AI

DocumentsTN1378 +24

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCT016H120G3AG

Current - Continuous Drain (Id) @ 25°C	112 A
Drain to Source Voltage (Vdss)	1.2 kV
Drive Voltage (Max Rds On, Min Rds On)	18 V, 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	150 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds [Max]	3623 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263CA, D2PAK (7 Leads + Tab), TO-263-8
Power Dissipation (Max)	652 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	22 mOhm
Supplier Device Package	H2PAK-7
Vgs (Max) [Max]	18 V, -5 V
Vgs(th) (Max) @ Id	4.2 V

SCT016H120G3AG Series

Automotive-grade silicon carbide Power MOSFET 1200 V, 16 mOhm typ., 112 A in an H2PAK-7 package

Part	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	FET Type	Mounting Type	Vgs (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Package / Case	Qualification	Grade	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Max]	Operating Temperature [Min]
STMicroelectronics SCT016H120G3AG	15 V 18 V	22 mOhm	4.2 V	N-Channel	Surface Mount	-5 V 18 V	3623 pF	652 W	1.2 kV	112 A	H2PAK-7	D2PAK (7 Leads + Tab) TO-263-8 TO-263CA	AEC-Q101	Automotive	150 nC	175 °C	-55 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	37	$ 23.33
Newark	Each (Supplied on Cut Tape)	1	$ 23.00
		10	$ 20.45
		25	$ 20.44
		50	$ 19.16
		100	$ 17.88
		250	$ 16.93
		500	$ 15.93
		1000	$ 15.66

Description

General part information

SCT016H120G3AG Series

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.