Specification	NVMYS006N08LHTWG

Current - Continuous Drain (Id) @ 25°C	77 A, 16 A
Drain to Source Voltage (Vdss)	80 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	34 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	1950 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-1023, 4-LFPAK
Power Dissipation (Max)	89 W, 3.7 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	6.2 mOhm
Supplier Device Package	LFPAK4
Supplier Device Package [x]	5
Supplier Device Package [y]	6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

NVMYS006N08LH Series

MOSFET - Power, Single N-Channel, 80 V, 6.2 mΩ, 77 A

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Current - Continuous Drain (Id) @ 25°C	Qualification	Vgs (Max)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	FET Type	Grade	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Technology
ON Semiconductor NVMYS006N08LHTWG	34 nC	2 V	5	LFPAK4	6	16 A 77 A	AEC-Q101	20 V	3.7 W 89 W	-55 °C	175 ░C	Surface Mount	N-Channel	Automotive	4.5 V 10 V	SOT-1023 4-LFPAK	1950 pF	80 V	6.2 mOhm	MOSFET (Metal Oxide)

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.15
		10	$ 1.38
		100	$ 0.94
		500	$ 0.75
		1000	$ 0.69
	Digi-Reel®	1	$ 2.15
		10	$ 1.38
		100	$ 0.94
		500	$ 0.75
		1000	$ 0.69
	Tape & Reel (TR)	3000	$ 0.61
		6000	$ 0.60
Newark	Each (Supplied on Full Reel)	3000	$ 0.76
		6000	$ 0.72
		12000	$ 0.65
		18000	$ 0.63
		30000	$ 0.60
ON Semiconductor	N/A	1	$ 0.64

Description

General part information

NVMYS006N08LH Series

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. Gullwing device to achieve improved Board Level Reliability performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.