NVMYS006N08LH Series

MOSFET - Power, Single N-Channel, 80 V, 6.2 mΩ, 77 A

Catalog

MOSFET - Power, Single N-Channel, 80 V, 6.2 mΩ, 77 A

Part	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Current - Continuous Drain (Id) @ 25°C	Qualification	Vgs (Max)	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	FET Type	Grade	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Technology
ON Semiconductor NVMYS006N08LHTWG	34 nC	2 V	5	LFPAK4	6	16 A 77 A	AEC-Q101	20 V	3.7 W 89 W	-55 °C	175 ░C	Surface Mount	N-Channel	Automotive	4.5 V 10 V	SOT-1023 4-LFPAK	1950 pF	80 V	6.2 mOhm	MOSFET (Metal Oxide)

Catalog

MOSFET - Power, Single N-Channel, 80 V, 6.2 mΩ, 77 A

Key Features

• Small Footprint (5x6mm)

• Low RDS(on)

• Low QGand Capacitance

• LFPAK4 Package, Industry Standard

• AEC−Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

Description

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. Gullwing device to achieve improved Board Level Reliability performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.