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STGWA40HP65FB
Discrete Semiconductor Products

STGWA40HP65FB

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STMicroelectronics

TRENCH GATE FIELD-STOP 650 V, 40 A HIGH-SPEED HB SERIES IGBT

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STGWA40HP65FB
Discrete Semiconductor Products

STGWA40HP65FB

Active
STMicroelectronics

TRENCH GATE FIELD-STOP 650 V, 40 A HIGH-SPEED HB SERIES IGBT

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTGWA40HP65FB
Current - Collector (Ic) (Max) [Max]72 A
Current - Collector Pulsed (Icm)120 A
Gate Charge153 nC
IGBT TypeTrench Field Stop
Mounting TypeThrough Hole
Operating Temperature [Max]175 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-247-3
Power - Max [Max]230 W
Reverse Recovery Time (trr)140 ns
Supplier Device PackageTO-247 Long Leads
Switching Energy410 µJ
Td (on/off) @ 25°C125 ns
Td (on/off) @ 25°C-
Test Condition400 V, 40 A, 4.7 Ohm, 15 V
Vce(on) (Max) @ Vge, Ic2 V
Voltage - Collector Emitter Breakdown (Max) [Max]650 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 1.47

Description

General part information

STGWA40HP65FB Series

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.