Discrete Semiconductor Products

SI4501ADY-T1-GE3

Obsolete

MOSFET N/P-CH 30V/8V 6.3A 8SOIC

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Discrete Semiconductor Products

Obsolete

MOSFET N/P-CH 30V/8V 6.3A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	SI4501ADY-T1-GE3

Configuration	Common Drain, N and P-Channel
Current - Continuous Drain (Id) @ 25°C [Max]	6.3 A
Current - Continuous Drain (Id) @ 25°C [Min]	4.1 A
Drain to Source Voltage (Vdss)	8 V, 30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]	20 nC
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Rds On (Max) @ Id, Vgs [Max]	18 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.8 V

Part	Drain to Source Voltage (Vdss)	Package / Case	Package / Case [y]	Package / Case [x]	FET Feature	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Rds On (Max) @ Id, Vgs [Max]	Configuration	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C [Min]	Current - Continuous Drain (Id) @ 25°C [Max]	Mounting Type	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]
Vishay General Semiconductor - Diodes Division SI4501ADY-T1-GE3	8 V 30 V	8-SOIC	3.9 mm	0.154 in	Logic Level Gate	20 nC	MOSFET (Metal Oxide)	18 mOhm	Common Drain N and P-Channel	8-SOIC	4.1 A	6.3 A	Surface Mount	1.8 V	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V, 8V 6.3A, 4.1A 1.3W Surface Mount 8-SOIC

Technical documentation and resources

No documents available