SI4501 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N/P-CH 30V/8V 6.3A 8SOIC
| Part | Drain to Source Voltage (Vdss) | Package / Case | Package / Case [y] | Package / Case [x] | FET Feature | Gate Charge (Qg) (Max) @ Vgs [Max] | Technology | Rds On (Max) @ Id, Vgs [Max] | Configuration | Supplier Device Package | Current - Continuous Drain (Id) @ 25°C [Min] | Current - Continuous Drain (Id) @ 25°C [Max] | Mounting Type | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 8 V 30 V | 8-SOIC | 3.9 mm | 0.154 in | Logic Level Gate | 20 nC | MOSFET (Metal Oxide) | 18 mOhm | Common Drain N and P-Channel | 8-SOIC | 4.1 A | 6.3 A | Surface Mount | 1.8 V | -55 °C | 150 °C |