Discrete Semiconductor Products

MCG16P03-TP

Obsolete

MOSFET P-CH 30V 16A DFN3030

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Discrete Semiconductor Products

Obsolete

MOSFET P-CH 30V 16A DFN3030

Technical Specifications

Parameters and characteristics for this part

Specification	MCG16P03-TP

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45.6 nC
Input Capacitance (Ciss) (Max) @ Vds	2130 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max) [Max]	35 W
Rds On (Max) @ Id, Vgs	15 mOhm
Supplier Device Package	DFN3030
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1.9 V

Part	Vgs (Max)	Supplier Device Package	Package / Case	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	FET Type
Micro Commercial Components MCG16P03-TP	20 V	DFN3030	8-PowerVDFN	16 A	2130 pF	35 W	15 mOhm	30 V	1.9 V	45.6 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	Surface Mount	4.5 V 10 V	P-Channel

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General part information

P-Channel 30 V 16A (Tc) 35W Surface Mount DFN3030

Technical documentation and resources