Zenode.ai Logo
Beta
TO-39
Discrete Semiconductor Products

2N1711S

Active
Microchip Technology

NPN SILICON LOW-POWER 30V TO 60V, 0.5A

Deep-Dive with AI

Search across all available documentation for this part.

TO-39
Discrete Semiconductor Products

2N1711S

Active
Microchip Technology

NPN SILICON LOW-POWER 30V TO 60V, 0.5A

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

Specification2N1711S
Current - Collector (Ic) (Max) [Max]500 mA
Current - Collector Cutoff (Max) [Max]0.01 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]100
Mounting TypeThrough Hole
Package / CaseTO-39-3 Metal Can, TO-205AD
Power - Max [Max]800 mW
Supplier Device PackageTO-39
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]30 V

2N1711S-Transistor Series

NPN Silicon Low-Power 30V to 60V, 0.5A

PartMounting TypePackage / CasePower - Max [Max]Current - Collector Cutoff (Max) [Max]Supplier Device PackageVce Saturation (Max) @ Ib, IcDC Current Gain (hFE) (Min) @ Ic, Vce [Min]Transistor TypeVoltage - Collector Emitter Breakdown (Max) [Max]Current - Collector (Ic) (Max) [Max]
TO-39
Microchip Technology
Through Hole
TO-205AD
TO-39-3 Metal Can
800 mW
0.01 µA
TO-39
1.5 V
100
NPN
30 V
500 mA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 22.17
Microchip DirectN/A 1$ 23.88
NewarkEach 100$ 22.18
500$ 21.33

Description

General part information

2N1711S-Transistor Series

This specification covers the performance requirements for NPN, silicon, low-power, 2N1711 and 2N1890 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for each device type as specified in MIL-PRF-19500/225.

Documents

Technical documentation and resources