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8-PQFN
Discrete Semiconductor Products

FDMS8333L

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 40V, 76A, 3.1MΩ

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8-PQFN
Discrete Semiconductor Products

FDMS8333L

Active
ON Semiconductor

N-CHANNEL POWERTRENCH<SUP>®</SUP> MOSFET 40V, 76A, 3.1MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDMS8333L
Current - Continuous Drain (Id) @ 25°C76 A, 22 A
Drain to Source Voltage (Vdss)40 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]64 nC
Input Capacitance (Ciss) (Max) @ Vds4545 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-PowerTDFN
Power Dissipation (Max)2.5 W, 69 W
Rds On (Max) @ Id, Vgs3.1 mOhm
Supplier Device Package8-PQFN (5x6)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.41
10$ 0.90
100$ 0.61
500$ 0.52
Digi-Reel® 1$ 1.41
10$ 0.90
100$ 0.61
500$ 0.52
Tape & Reel (TR) 3000$ 0.52
NewarkEach (Supplied on Full Reel) 3000$ 0.66
6000$ 0.63
12000$ 0.56
18000$ 0.54
30000$ 0.52
ON SemiconductorN/A 1$ 0.33

Description

General part information

FDMS8333L Series

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on), fast switching speed, and body diode reverse-recovery performance.