Discrete Semiconductor Products

STF14NM65N

Obsolete

MOSFET N-CH 650V 12A TO220FP

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 650V 12A TO220FP

Technical Specifications

Parameters and characteristics for this part

Specification	STF14NM65N

Current - Continuous Drain (Id) @ 25°C	12 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	45 nC
Input Capacitance (Ciss) (Max) @ Vds	1300 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs	380 mOhm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Technology	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Supplier Device Package	Operating Temperature [Max]	Operating Temperature [Min]	Current - Continuous Drain (Id) @ 25°C	Package / Case	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature
STMicroelectronics STF14N80K5	10 V	5 V	MOSFET (Metal Oxide)	445 mOhm	800 V	Through Hole	620 pF	TO-220FP	150 °C	-55 °C	12 A	TO-220-3 Full Pack	N-Channel	30 V	22 nC
STMicroelectronics STF14NM65N	10 V	4 V	MOSFET (Metal Oxide)	380 mOhm	650 V	Through Hole	1300 pF	TO-220FP			12 A	TO-220-3 Full Pack	N-Channel	25 V		45 nC	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 2.69

General part information

N-Channel 650 V 12A (Tc) 30W (Tc) Through Hole TO-220FP

Technical documentation and resources