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ONSEMI MUN5112DW1T1G
Discrete Semiconductor Products

2N7002DW

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ON Semiconductor

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 60V, 0.115A, 2Ω

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ONSEMI MUN5112DW1T1G
Discrete Semiconductor Products

2N7002DW

Active
ON Semiconductor

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 60V, 0.115A, 2Ω

Technical Specifications

Parameters and characteristics for this part

Specification2N7002DW
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C115 mA
Drain to Source Voltage (Vdss)60 V
FET FeatureLogic Level Gate
Input Capacitance (Ciss) (Max) @ Vds50 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-TSSOP, SC-88, SOT-363
Power - Max [Max]200 mW
Rds On (Max) @ Id, Vgs7.5 Ohm
Supplier Device PackageSC-88 (SC-70-6)
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.46
10$ 0.28
100$ 0.18
500$ 0.13
1000$ 0.12
Digi-Reel® 1$ 0.46
10$ 0.28
100$ 0.18
500$ 0.13
1000$ 0.12
Tape & Reel (TR) 3000$ 0.10
6000$ 0.09
9000$ 0.09
15000$ 0.08
21000$ 0.08
30000$ 0.08
75000$ 0.07
NewarkEach (Supplied on Full Reel) 3000$ 0.09
6000$ 0.09
12000$ 0.09
18000$ 0.09
30000$ 0.09
ON SemiconductorN/A 1$ 0.08

Description

General part information

2N7002KX Series

The 2N7002DW is a Dual N-Channel MOSFET with low on-resistance and a low gate threshold voltage. This is combined with a fast switching speed and an ultra-small surface mount package, making it suitable for many different applications.