Specification	2N7002KT3G

Current - Continuous Drain (Id) @ 25°C	320 mA
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	0.7 nC
Input Capacitance (Ciss) (Max) @ Vds	24.5 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	350 mW
Rds On (Max) @ Id, Vgs	1.6 Ohm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.3 V

2N7002KX Series

N-Channel Enhancement Mode Field Effect Transistor 60V, 0.115A, 2Ω

Part	Power Dissipation (Max) [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Vgs(th) (Max) @ Id	Technology	Vgs (Max)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	FET Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Power - Max [Max]	FET Feature	Configuration	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor 2N7002KT1G	300 mW	SOT-23-3 (TO-236)	0.7 nC	Surface Mount	2.3 V	MOSFET (Metal Oxide)	20 V	60 V	-55 °C	150 °C	320 mA	4.5 V 10 V	24.5 pF	SC-59 SOT-23-3 TO-236-3	N-Channel	1.6 Ohm
ON Semiconductor 2N7002KT3G	350 mW	SOT-23-3 (TO-236)	0.7 nC	Surface Mount	2.3 V	MOSFET (Metal Oxide)	20 V	60 V	-55 °C	150 °C	320 mA	4.5 V 10 V	24.5 pF	SC-59 SOT-23-3 TO-236-3	N-Channel	1.6 Ohm
ON Semiconductor 2N7002L		SOT-23-3		Surface Mount	2.5 V	MOSFET (Metal Oxide)	20 V	60 V	-55 °C	150 °C	115 mA		50 pF	SC-59 SOT-23-3 TO-236-3	N-Channel	7.5 Ohm	200 mW	10 V	5 V
ON Semiconductor 2N7002DW		SC-88 (SC-70-6)		Surface Mount	2 V	MOSFET (Metal Oxide)		60 V	-55 °C	150 °C	115 mA		50 pF	6-TSSOP SC-88 SOT-363		7.5 Ohm				200 mW	Logic Level Gate	2 N-Channel (Dual)
ON Semiconductor 2N7002K	300 mW	SOT-23-3 (TO-236)	0.7 nC	Surface Mount	2.3 V	MOSFET (Metal Oxide)	20 V	60 V	-55 °C	150 °C	320 mA	4.5 V 10 V	24.5 pF	SC-59 SOT-23-3 TO-236-3	N-Channel	1.6 Ohm
ON Semiconductor 2N7002-F169		SOT-23-3		Surface Mount	2.5 V	MOSFET (Metal Oxide)	20 V	60 V	-55 °C	150 °C	115 mA		50 pF	SC-59 SOT-23-3 TO-236-3	N-Channel	7.5 Ohm		10 V	5 V
ON Semiconductor 2N7002MTF		SOT-23-3		Surface Mount	3 V	MOSFET (Metal Oxide)	20 V	60 V	-55 °C	150 °C	115 mA		50 pF	SC-59 SOT-23-3 TO-236-3	N-Channel	7.5 Ohm	200 mW	10 V	5 V
ON Semiconductor 2N7002ET1G		SOT-23-3 (TO-236)		Surface Mount	2.5 V	MOSFET (Metal Oxide)	20 V	60 V	-55 °C	150 °C	260 mA	4.5 V 10 V	26.7 pF	SC-59 SOT-23-3 TO-236-3	N-Channel		300 mW						0.81 nC
ON Semiconductor 2N7002ET7G		SOT-23-3 (TO-236)		Surface Mount	2.5 V	MOSFET (Metal Oxide)	20 V	60 V	-55 °C	150 °C	260 mA	4.5 V 10 V	40 pF	SC-59 SOT-23-3 TO-236-3	N-Channel		300 mW						0.81 nC
ON Semiconductor 2N7002_L99Z		SOT-23-3		Surface Mount	2.5 V	MOSFET (Metal Oxide)	20 V	60 V	-55 °C	150 °C	115 mA		50 pF	SC-59 SOT-23-3 TO-236-3	N-Channel	7.5 Ohm	200 mW	10 V	5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

2N7002KX Series

The 2N7002DW is a Dual N-Channel MOSFET with low on-resistance and a low gate threshold voltage. This is combined with a fast switching speed and an ultra-small surface mount package, making it suitable for many different applications.

Documents

Technical documentation and resources

Datasheet

Package Drawing-318-SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P

Package Drawing