Discrete Semiconductor Products

PMGD290UCEAX

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MOSFET N/P-CH 20V 0.725A 6TSSOP

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Discrete Semiconductor Products

Active

MOSFET N/P-CH 20V 0.725A 6TSSOP

Technical Specifications

Parameters and characteristics for this part

Specification	PMGD290UCEAX

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	725 mA, 500 mA
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	0.68 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	83 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-TSSOP, SC-88, SOT-363
Power - Max [Max]	280 mW
Qualification	AEC-Q100
Rds On (Max) @ Id, Vgs [Max]	380 mOhm
Supplier Device Package	6-TSSOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.3 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs [Max]	Vgs(th) (Max) @ Id	Supplier Device Package	Grade	Current - Continuous Drain (Id) @ 25°C	Technology	Qualification	Mounting Type	Package / Case	Configuration	FET Feature	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]
Freescale Semiconductor - NXP PMGD290UCEAX	83 pF	280 mW	0.68 nC	380 mOhm	1.3 V	6-TSSOP	Automotive	500 mA 725 mA	MOSFET (Metal Oxide)	AEC-Q100	Surface Mount	6-TSSOP SC-88 SOT-363	N and P-Channel	Logic Level Gate	20 V	-55 °C	150 °C

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General part information

Mosfet Array 20V 725mA, 500mA 280mW Surface Mount 6-TSSOP

Technical documentation and resources