
Catalog
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
Description
AI
Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
20 / 20 V, 725 / 500 mA N/P-channel Trench MOSFET
| Part | Current - Continuous Drain (Id) @ 25°C | Configuration | Vgs(th) (Max) @ Id | Technology | Drain to Source Voltage (Vdss) | Supplier Device Package | Package / Case | Operating Temperature [Max] | Operating Temperature [Min] | Grade | Gate Charge (Qg) (Max) @ Vgs | Rds On (Max) @ Id, Vgs | Qualification | FET Feature | Power - Max [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 500 mA 725 mA | N and P-Channel | 1.3 V | MOSFET (Metal Oxide) | 20 V | 6-TSSOP | 6-TSSOP SC-88 SOT-363 | 150 °C | -55 °C | Automotive | 0.68 nC | 380 mOhm | AEC-Q100 | Logic Level Gate | 280 mW | 83 pF | Surface Mount |