Discrete Semiconductor Products

EGF1A

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FAST / ULTRAFAST DIODE, 50 V, 1 A, SINGLE, 1 V, 50 NS, 30 A

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Discrete Semiconductor Products

Active

FAST / ULTRAFAST DIODE, 50 V, 1 A, SINGLE, 1 V, 50 NS, 30 A

Technical Specifications

Parameters and characteristics for this part

Specification	EGF1A

Capacitance @ Vr, F	15 pF
Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-214AC, SMA
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-214AC (SMA)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	50 V
Voltage - Forward (Vf) (Max) @ If	1 V

1.0A Ultra Fast Recovery Rectifier

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If	Current - Reverse Leakage @ Vr	Speed	Supplier Device Package	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Current - Average Rectified (Io)	Capacitance @ Vr, F	Package / Case	Reverse Recovery Time (trr)
ON Semiconductor EGF1B	175 ░C	-65 C	1 V	10 µA	200 mA 500 ns	DO-214AC (SMA)	Surface Mount	100 V	Standard	1 A	15 pF	DO-214AC SMA	50 ns
ON Semiconductor EGF1C	175 ░C	-65 C	1 V	10 µA	200 mA 500 ns	DO-214AC (SMA)	Surface Mount		Standard	1 A	15 pF	DO-214AC SMA	50 ns
ON Semiconductor EGF1A	175 ░C	-65 C	1 V	10 µA	200 mA 500 ns	DO-214AC (SMA)	Surface Mount	50 V	Standard	1 A	15 pF	DO-214AC SMA	50 ns

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General part information

1.0A Ultra Fast Recovery Rectifier

Technical documentation and resources