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UB and UBC 3-SMD No Lead
Discrete Semiconductor Products

MSR2N2369AUBC/TR

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Microchip Technology

RH SMALL-SIGNAL BJT UBC ROHS COMPLIANT: YES

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UB and UBC 3-SMD No Lead
Discrete Semiconductor Products

MSR2N2369AUBC/TR

Active
Microchip Technology

RH SMALL-SIGNAL BJT UBC ROHS COMPLIANT: YES

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationMSR2N2369AUBC/TR
Current - Collector Cutoff (Max) [Max]400 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]40 hFE
GradeMilitary
Mounting TypeSurface Mount
Package / Case3-SMD, No Lead
Power - Max [Max]360 mW
QualificationMIL-PRF-19500
Supplier Device PackageUBC
Transistor TypeNPN
Vce Saturation (Max) @ Ib, Ic250 mV
Voltage - Collector Emitter Breakdown (Max)15 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 100$ 299.92
Microchip DirectN/A 1$ 322.97
NewarkEach (Supplied on Full Reel) 100$ 299.92
500$ 288.38

Description

General part information

MSR2N2369AUBC-Transistor Series

This specification covers the performance requirements for NPN, silicon, high speed switching 2N2369A, 2N3227 and 2N4449 transistors (including dual devices). Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/317 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to two radiation levels ("R" and "F") are provided for JANTXV product assurance level. Provisions for RHA to eight radiation levels are provided for JANS and JANKC. RHA level designators "M", "D", "P", "L", "R", "F’, "G", and "H" are appended to the device prefix to identify devices, which have passed RHA requirements.

Documents

Technical documentation and resources