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Power MOSFET, N Channel, 600 V, 12 A, 0.25 ohm, PQFN, Surface Mount
Discrete Semiconductor Products

FFSM0665B

Active
ON Semiconductor

SILICON CARBIDE (SIC) SCHOTTKY DIODE – ELITESIC, 6 A, 650 V, D2, POWER88 SILICON CARBIDE (SIC) SCHOT… MORE

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Search across all available documentation for this part.

DocumentsDatasheetDatasheet+3
Power MOSFET, N Channel, 600 V, 12 A, 0.25 ohm, PQFN, Surface Mount
Discrete Semiconductor Products

FFSM0665B

Active
ON Semiconductor

SILICON CARBIDE (SIC) SCHOTTKY DIODE – ELITESIC, 6 A, 650 V, D2, POWER88 SILICON CARBIDE (SIC) SCHOT… MORE

Deep-Dive with AI

DocumentsDatasheetDatasheet+3

Technical Specifications

Parameters and characteristics for this part

SpecificationFFSM0665B
Capacitance @ Vr, F259 pF
Current - Average Rectified (Io)9.1 A
Current - Reverse Leakage @ Vr40 µA
Mounting TypeSurface Mount
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-55 C
Package / Case4-PowerTSFN
Reverse Recovery Time (trr)0 ns
SpeedNo Recovery Time
Supplier Device Package4-PQFN (8x8)
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]650 V
Voltage - Forward (Vf) (Max) @ If1.7 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.97
10$ 2.46
100$ 1.96
500$ 1.66
1000$ 1.41
Digi-Reel® 1$ 2.97
10$ 2.46
100$ 1.96
500$ 1.66
1000$ 1.41
Tape & Reel (TR) 3000$ 1.24
ON SemiconductorN/A 1$ 1.14

Description

General part information

FFSM0665B Series

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.