FFSM0665B Series

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6 A, 650 V, D2, Power88

Catalog

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6 A, 650 V, D2, Power88

Part	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Mounting Type	Current - Reverse Leakage @ Vr	Speed	Reverse Recovery Time (trr)	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Package / Case	Current - Average Rectified (Io)
ON Semiconductor FFSM0665A	SiC (Silicon Carbide) Schottky	650 V	Surface Mount	200 µA	No Recovery Time	0 ns	365 pF	1.75 V	175 ░C	-55 C	4-PQFN (8x8)	4-PowerTSFN	8 A
ON Semiconductor FFSM0665B	SiC (Silicon Carbide) Schottky	650 V	Surface Mount	40 µA	No Recovery Time	0 ns	259 pF	1.7 V	175 ░C	-55 C	4-PQFN (8x8)	4-PowerTSFN	9.1 A

Catalog

Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6 A, 650 V, D2, Power88

Key Features

• Max Junction Temperature 175 °C

• Leadless Ultra-thin SMD package

• High Surge Current Capacity

• Positive Temperature Coefficient

• No Reverse Recovery / No Forward Recovery

• Pb−Free, Halogen Free/BFR Free and RoHS Compliant

Description

Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.