Discrete Semiconductor Products

STB18N55M5

Obsolete

MOSFET N-CH 550V 16A D2PAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 550V 16A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	STB18N55M5

Current - Continuous Drain (Id) @ 25°C	16 A
Drain to Source Voltage (Vdss)	550 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	31 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1260 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Power Dissipation (Max)	110 W
Rds On (Max) @ Id, Vgs	192 mOhm
Supplier Device Package	TO-263 (D2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

Part	Power Dissipation (Max)	Mounting Type	Technology	Input Capacitance (Ciss) (Max) @ Vds [Max]	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drain to Source Voltage (Vdss)	Vgs (Max)	Vgs(th) (Max) @ Id	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs	FET Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)
STMicroelectronics STB18N55M5	110 W	Surface Mount	MOSFET (Metal Oxide)	1260 pF	192 mOhm	16 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	550 V	25 V	5 V	150 °C	31 nC	N-Channel	TO-263 (D2PAK)	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 1.55

General part information

N-Channel 550 V 16A (Tc) 110W (Tc) Surface Mount TO-263 (D2PAK)

Technical documentation and resources