Specification	NTLJS3D0N02P8ZTAG

Current - Continuous Drain (Id) @ 25°C	12.1 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	21 nC
Input Capacitance (Ciss) (Max) @ Vds	2165 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	6-PowerWDFN
Power Dissipation (Max)	860 mW
Rds On (Max) @ Id, Vgs	3.8 mOhm
Supplier Device Package	6-PQFN (2x2)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.2 V

NTLJS3D0N02P8Z Series

MOSFET, Power, 20V, N-Channel, WDFN6

Part	Package / Case	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]
ON Semiconductor NTLJS3D0N02P8ZTAG	6-PowerWDFN	Surface Mount	12.1 A	860 mW	21 nC	3.8 mOhm	-55 °C	150 °C	MOSFET (Metal Oxide)	1.2 V	20 V	N-Channel	2165 pF	12 V	1.8 V 4.5 V	6-PQFN (2x2)
ON Semiconductor NTLJS3D9N03CTAG	6-PowerWDFN	Surface Mount	10.3 A	860 mW		4.9 mOhm	-55 °C	150 °C	MOSFET (Metal Oxide)	1.1 V	30 V	N-Channel	1565 pF	12 V	1.8 V 4.5 V	6-PQFN (2x2)	14.7 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

MOSFET, Power, Single 30V/±12V N-Channel, 4.9mΩ @ 4.5V, 17.8A, WDFN6 2x2x0.8mm